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TMS non-ITAR GaN Amplifiers At A Glance
  FREQUENCY: 0.1 to 6.0 GHz
    TECHNOLOGY: GaN
    PACKAGING: Connectorized
    PLATFORMS: Ground, Airborne
    APPLICATIONS: Demanding Military and Commercial
    EXPORT CLASSIFICATION: Non-ITAR
    CALCULATED MTBF: 40,000 + hours @85°C

Depending on frequency band, output power ranges between 15 and 40 watts with minimum overall gain of 50 dB. Due to the modular design techniques used by TMS engineers, these amplifiers can be easily modified to comply with your frequency and power-level requirements.

TMS Amplifiers

GaN Amplifiers, High Power GaN X-band SSPAs,  Low Noise Amplifiers, Solid State Power Amplifiers, Communications / Data Link, Gain Shape Linearizer Amplifiers, Limiting Amplifiers, SDLVAs

TMS Amplifiers are designed and manufactured using all major semiconductor materials, LDMOS, GaN, GaAs, and InP, to produce narrow, wideband, and pulse, receive and transmit amplifiers from 1 MHz to 220 GHz and power levels from mW to over 10 kW.

Contact Us:

800-832-6869 microwave@teledyne.com www.teledynemicrowave.com
 

                        

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